N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using trench technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
Specifications (Max Limits)
Drain current (DC): 49A
Total power dissipation: 110 W
Junction temperature: 175°C
Drain-source on-state resistance VGS = 10 V: 22 mW
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This product was added to our catalog on Thursday 10 August, 2006.
