BC182B NPN General Purpose TO92 50V 100mA
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current - Continuous 100 mA
TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA
IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA
On Characteristics
hFE DC Current Gain VCE = 5V, IC = 10μA
VCE = 5V, IC = 100mA
40
80
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
0.25
0.6
V
VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.2 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.55 0.7 V
Dynamic Characteristics
fT Current Gain Bandwidth Product VCE = 5V, IC = 10mA, f = 100MHz 150 MHz
Cob Output Capacitance VCE = 10V, IC = 0, f = 1MHz 5 pF
hfe Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 240 500
NF Noise Figure VCE = 5V, IC = 0.2mA
RS = 2KΩ, f = 1KHz, BW = 200Hz
10 dB
This product was added to our catalog on Tuesday 12 May, 2020.