This NAND gates is a monolithic complementary MOS (CMOS) integrated circuit. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge and latching conditions.
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This product was added to our catalog on Monday 01 May, 2006.