2SB716 Signal Transistor (SEM13H)

2SB716 Signal Transistor

Characteristics of the 2SB716 bipolar transistor

• Type - p-n-p
• Collector-Emitter Voltage: -120 V
• Collector-Base Voltage: -120 V
• Emitter-Base Voltage: -5 V
• Collector Current: -0.05 A
• Collector Dissipation - 0.75 W
• DC Current Gain (h_fe) - 250 to 800
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -55 to +150 °C

http://www.alldatasheet.com/datasheet-pdf/pdf/62850/HITACHI/2SB716.html